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首页> 外文期刊>SID International Symposium: Digest of Technology Papers >Reduced Contact Resistance with MoO_x Injection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level
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Reduced Contact Resistance with MoO_x Injection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level

机译:基于具有深HOMO能级的有机半导体的薄膜晶体管MoO_x注入层的接触电阻降低

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摘要

We investigated the contact resistance of the OTFTs based on dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene (DNTT) as a representative organic semiconductors with deep HOMO level. We confirmed a dramatic decrease in the contact resistance with the MoO_x injection layer by transmission line method and y-function method.
机译:我们研究了基于萘并[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩(DNTT)作为具有深HOMO能级的代表性有机半导体的OTFT的接触电阻。我们通过传输线方法和y函数方法证实了与MoO_x注入层的接触电阻显着降低。

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