In-Depth Study on Large-Area Bar-Printing and Selective-Area Direct Patterning of Metal Oxide Dielectrics for High-Performance Transistor Application

摘要

A simple and unidirectional printing of sol-gel metal oxide dielectric layers via bar-coating was successfully demonstrated while the nanoscale control of ultrathin film thickness (6 ～ 30 nm) and the excellent insulating performance were achieved. According to various physical and electrical characterizations, the present bar-printing method enabled to fabricate smooth, dense, and uniform thin oxide films which were comparable to or slightly better than those prepared by spin-coating. Finally, both semiconductor and dielectric films were successively patterned by bar-printing employing the phenomenon of selective surface wetting, leading to high-performance low-voltage all-solution processed metal oxide transistors.