A Novel Vertical-Type Light-Emitting Transistor and Panel Design on Amorphous Silicon Backplane for High Resolution TV Application

摘要

We have developed novel vertical-type transistors (VTs) and vertical-type light-emitting transistors (VLTs) using a combination of metal oxide and organic semiconductor materials. We have obtained an ON/OFF ratio =3.7 and Gain =16.7 in the first VT device. We also report pixel and circuit design for a 42" 4K bottom emission VLT panel on a conventional amorphous silicon (a-Si) backplane with 60% aperture ratio operated by a novel high speed feedback compensation circuit.