3.5 Inch QCIF+ AM-OLED Panel Based on Oxide TFT Backplane

摘要

JGZO TFTs were fabricated on a glass substrate by conventional photo-lithography and wet-etching processes. The real mobility of our device was about 95 cm /Vs and had very low dependence on the variation ofW/L, channel length and channel width. An IGZO TFT array was also fabricated and a top emission OLED device was successfully driven by it. Therefore, the oxide TFT could be one of the promising candidates as a backplane for the OLED device.