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Use of a thermal plasma process to recycle silicon kerf loss to solar-grade silicon feedstock

机译:使用热等离子体工艺将硅切口损失回收为太阳能级硅原料

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The objective of this study was to recycle the dust generated in the slicing of silicon wafers (silicon kerf) by means of a two-stage thermal plasma process. In the first stage, the silicon particles are injected in a plasma jet where silicon oxides and carbon impurities are removed by vaporization. In the second stage, the purified silicon droplets are collected in a silicon bath maintained in a hot-wall crucible. The optimal operating conditions for reduction were determined by injecting into the plasma jet a commercial silicon powder of known degree of oxidation and measuring the attained degree of reduction. Also, silicon powders from wafer slicing were processed in the two-stage plasma set-up. The results of these tests showed that the deoxidation rate of the final silicon ingot was as high as 80% and the initial carbon concentration decreased by 85%. The purification was essentially controlled by the residence time of particles in the hottest zones of the plasma jet and the partial pressure of oxygen in the processing atmosphere. (C) 2016 Elsevier B.V. All rights reserved.
机译:这项研究的目的是通过两阶段热等离子体工艺来回收切片硅晶片(硅切口)中产生的粉尘。在第一阶段,将硅颗粒注入等离子流中,在其中通过蒸发除去氧化硅和碳杂质。在第二阶段中,将纯化的硅滴收集在保持在热壁坩埚中的硅浴中。还原的最佳操作条件是通过将等离子氧化度已知的市售硅粉注入等离子流并测量还原度来确定的。同样,在两步等离子体设置中处理了来自晶片切片的硅粉。这些测试的结果表明,最终硅锭的脱氧率高达80%,初始碳浓度降低了85%。纯化基本上是通过等离子流最热区域中的颗粒停留时间和处理气氛中氧气的分压来控制的。 (C)2016 Elsevier B.V.保留所有权利。

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