Ga and In Co-Doped Zinc Oxide Films Deposited on Flexible High Gas Barrier Films for Transparent Conductive Electrode

摘要

We developed the highly moisture resistance Zinc Oxide films on flexible high gas barrier PEN substrates. After the damp test, changing ratio of sheet resistance were 1.02, this value can be applied the flexible device electrode. We studied the structural, optical and electrical properties of Zinc Oxide films in detail. After a damp test at 60℃, 95%RH for 1000 h, sheet resistance of 200 nm thickness GIZO film on deposited plastic high gas barrier substrate was 30 ohm/sq., and changing ratio of sheet resistance, before and after damp test value was 1.02.