All-Inorganic Quantum-Dot Light-Emitting Devices Prepared by Solution-Process Route

摘要

We have fabricated all-inorganic quantum-dot light-emitting devices(QDLED) with NiO as a hole transporting layer and TiO_2 as a inorganic electron transporting layer. P-type NiO and n-type TiO_2 charge-transport layers were synthesized by sol-gel method using spin-coating technique. The thickness of TiO_2 layer was optimized with different spin-coating speed, and studied the luminescence characteristics of devices. Results indicated devices with 4000 rpm TiO_2 layer has lower turn voltage 4.2V and higher EL intensity.