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A MONOLITHICALLY INTEGRATED SENSOR SYSTEM USING SENSOR-SPECIFIC CMOS CELLS

机译:使用特定于传感器的CMOS单元的全集成传感器系统

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A 1 bar pressure sensor and an analog signal-conditioning circuit have been integrated on a single silicon chip by means of a standard CMOS process followed by micromechanical structuring of the device. The development and design of the sensor system are based on the commercial cell library of the semiconductor manufacturer European Silicon Structures (ES2). Suitable analog cells of the library have been modified regarding the requirements of the sensor system. The electrical elements of the sensor module and the modified circuits have been defined as new library elements and adapted for use in conventional CAD tools. A mechanical simulation model of the piezoresistive sensor has been implemented in an electrical analog simulator. Thus the complete system can be optimized and checked before the fabrication. After balancing of the sensor, the experimental results of the demonstrator device show a total system error of less than 0.7% FSO for a pressure variation from 0 to 1000 mbar and in the temperature range -20 to 80 degrees C. [References: 6]
机译:一个1 bar的压力传感器和一个模拟信号调节电路已经通过标准CMOS工艺集成在单个硅芯片上,随后进行了设备的微机械构造。传感器系统的开发和设计基于半导体制造商欧洲硅结构(ES2)的商业单元库。关于传感器系统的要求,已对库中合适的模拟单元进行了修改。传感器模块的电气元件和修改后的电路已定义为新的库元件,并适合在常规CAD工具中使用。压阻传感器的机械仿真模型已在电气模拟模拟器中实现。因此,可以在制造之前优化和检查整个系统。传感器平衡后,演示器设备的实验结果表明,在0至1000 mbar的压力变化以及-20至80摄氏度的温度范围内,总系统误差小于FSO的0.7%。[参考:6]

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