A semiconductor device (20) comprises a substrate (24), a first semiconductor region including a recessed area defining a first cavity (36) between the substrate (24) and the first semiconductor region, an electrical transducer (30) positioned within the first cavity (36), a second semiconductor.region including a recessed area defining a second cavity (40) between the substrate (24) and the second semiconductor region, an electrical circuit (34) positioned within the second cavity (40), and at least one electrode connecting the electrical transducer (30) and the electrical device (34). The semiconductor device (20) includes a first external electrode and a second external electrode formed on the substrate (24) and a sealing layer extending around the perimeter of the cavities and sealing the semiconductor regions to the substrate (24). The sealing layer (78) includes a first electrical connection region and a second electrical connection region that are electrically isolated from each other. The first connection region electrically connects a first internal electrode to the first external electrode and the second connection region electrically connects a second internal electrode to the second external electrode through the sealing layer (78).
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