Microstereolithography of lead zirconate titanate thick film on silicon substrate

摘要

The microstereolithography (mu SL) of lead zirconate titanate (PZT) thick films on platinum-buffered silicon substrates is reported for the first time in this paper. Crack-free PZT thick films (80-130 mum thick) have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 muC/cm(2). The field-induced longitudinal piezoelectric coefficient (d(33)) of an 84-mum thick film is 100 pC/N and the piezoelectric voltage coefficient (g(33)) is about 59.5 x 10(-3) V m/N. These results demonstrated the potential for mu SL of advanced piezoelectric microsensors and microactuators. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 24]