Sn Doped In_2O_3 Nanostructures on Glass Substrates: A New Approach Towards Room Temperature Gas Sensor

摘要

Tin doped indium oxide nanostructured thin film has been grown on glass substrates at room temperature using a simple dip coating technique. The coating solution has been prepared from indium nitrate precursor. Grass-like growth has been observed through 3-D Atomic Force Microscopic (AFM) images whereas the 2-D image of AFM shows smaller grains over the surface. The average crystallite size has been found to be 4 nm. The current-voltage characteristic of the nanostructured thin film shows a linear variation of current with the increase in voltage. The gas sensing property of the grown nanostructured thin film has been tested with ethanol, ammonia and acetone at room temperature. It showed a considerable variation and good response towards the reducing gas ethanol.