首页> 外文期刊>Sensors and Actuators, A. Physical >LOW PRESSURE ACOUSTIC SENSORS FOR AIRBORNE SOUND WITH PIEZORESISTIVE MONOCRYSTALLINE SILICON AND ELECTROCHEMICALLY ETCHED DIAPHRAGMS
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LOW PRESSURE ACOUSTIC SENSORS FOR AIRBORNE SOUND WITH PIEZORESISTIVE MONOCRYSTALLINE SILICON AND ELECTROCHEMICALLY ETCHED DIAPHRAGMS

机译:含正压渗透性单晶硅和电化学刻绘的航空声音的低压声传感器

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In this paper experimental results and theoretical considerations of an acoustic silicon sensor for airborne sound, which is based on boron-implanted monocrystalline piezoresistors located on an electrochemically etched silicon diaphragm, are presented. The bandwidth of the sensor is nearly 20 kHz (full audio bandwidth), a maximum sensitivity of 80 mu V Pa-1 (bias voltage, 8 V) was achieved and a lowest equivalent noise level of about 61 dB(A) was measured. The membrane thickness is about 1.3 mu m; the membrane area amounts to 1 mm(2). Furthermore, a good reproducibility and linearity could be obtained. The weak sensitivity can mainly be explained by a residual inherent tensile stress in the silicon-silicon dioxide-silicon nitride layer system of the diaphragm and by the large geometric dimensions of the resistors. [References: 11]
机译:在本文中,提出了一种基于空气植入的声硅传感器的实验结果和理论考虑,该传感器基于位于电化学蚀刻的硅膜片上的硼注入单晶压敏电阻器。传感器的带宽接近20 kHz(全音频带宽),最大灵敏度为80μV Pa-1(偏置电压为8 V),并且测得的最低等效噪声水平约为61 dB(A)。膜厚度为约1.3μm。膜面积达1毫米(2)。此外,可以获得良好的再现性和线性。灵敏度低的主要原因可以是膜片的硅-二氧化硅-氮化硅层系统中残留的固有张应力以及电阻器的较大几何尺寸。 [参考:11]

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