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Single-crystal growth of NaCl-structure Al-Cr-N thin films on MgO(001) by magnetron sputter epitaxy

机译:磁控溅射外延在MgO(001)上单晶生长NaCl结构Al-Cr-N薄膜

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摘要

Single-crystal NaCl-structure Al_(0.68)Cr_(0.32)N thin films were deposited onto MgO(00l) substrates. The firms exhibit cube-on-cube epitaxial growth with an initial pseudomorphic strained layer before complete relaxation into an isotropic lattice parameter of 4.119 A as shown by symmetric high-resolution X-ray diffraction and asymmetric reciprocal space maps. The relaxation proceeds via a threading dislocation network as revealed by transmission electron microscopy. Films of 900 run thickness have a hardness of 32.4 +- 0.5 GPa, an elastic modulus of 460.8 +- 5 GPa, and a room-temperature resistivity of 2.7 x 10~3 OMEGA cm as determined by nanoindentation and four-point probe measurements, respectively.
机译:将单晶NaCl结构Al_(0.68)Cr_(0.32)N薄膜沉积到MgO(00l)衬底上。这些公司展现出了立方对立方的外延生长,并具有初始的伪晶形应变层,然后完全弛豫为4.119 A的各向同性晶格参数,如对称高分辨率X射线衍射和不对称倒易空间图所示。如透射电子显微镜所揭示的,弛豫通过穿线位错网络进行。通过纳米压痕和四点探针测量,厚度为900行程的薄膜的硬度为32.4±0.5 GPa,弹性模量为460.8±5 GPa,室温电阻率为2.7 x 10〜3 OMEGA cm。分别。

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