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Temperature dependence of reversible field-induced strain in Ni-Mn-Ga single crystal

机译:Ni-Mn-Ga单晶中可逆场致应变的温度依赖性

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摘要

Temperature dependence of reversible magnetic shape memory effect and magnetization changes were studied in Ni49.7Mn29.1Ga21.2. The twinning stress, equivalent magnetic stress, switching field and maximum strain all increase with decreasing temperature. A 5-6% reversible strain is observed in the temperature range of 307-263 K and it sharply decreases to 1-2% at temperatures below 263 K. The main features of the observed behavior are explained using a simple energy-controlled model. Predictions of the model agree well with the experiment. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
机译:在Ni49.7Mn29.1Ga21.2中研究了可逆磁性形状记忆效应与磁化强度的温度依赖性。孪生应力,等效磁应力,转换场和最大应变都随温度降低而增加。在307-263 K的温度范围内观察到5-6%的可逆应变,在263 K以下的温度下急剧降低至1-2%。使用简单的能量控制模型解释了观察到的行为的主要特征。该模型的预测与实验非常吻合。 (c)2006 Acta Materialia Inc.,由Elsevier Ltd.发行。保留所有权利。

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