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Structural and electrical properties of nickel-iron thin film on copper substrate for dynamic random access memory applications

机译:动态随机存取存储器应用中铜基板上镍铁薄膜的结构和电学性质

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摘要

Using pulse electrodeposition technique, nano crystalline NiFe films were deposited on conductive copper substrates, under galvanostatic mode in an ultrasonic field at different conditions such as pulse current magnitude, deposition time and ultrasonic bath temperature. As-prepared NiFe/Cu thin films were characterized for phase analysis, surface morphology, surface roughness and resistivity measurements. The results show that the use of ultrasonic bath at room temperature has reduced the surface roughness, resistivity, average grain size and crystallite size of NiFe/Cu thin films. The resistivity is reduced with increasing deposition current from 44.2 A mu Omega cm at 40 mA to 33.0 A mu Omega cm at 100 mA. On the other hand, a significant drop of the resistivity from 35.7 to 9.4 A mu Omega cm is observed if the deposition time was reduced from 5 to 3 min.
机译:使用脉冲电沉积技术,在恒电流模式下,在超声场中,在不同条件下(例如脉冲电流大小,沉积时间和超声浴温度),在导电铜基板上沉积纳米晶状的NiFe膜。对制备的NiFe / Cu薄膜进行了相分析,表面形态,表面粗糙度和电阻率测量。结果表明,在室温下使用超声浴降低了NiFe / Cu薄膜的表面粗糙度,电阻率,平均晶粒尺寸和微晶尺寸。随着沉积电流的增加,电阻率从40 mA时的44.2 A u Omega cm减小到100 mA时的33.0 A u Omega cm。另一方面,如果沉积时间从5分钟减少到3分钟,则电阻率将从35.7显着下降到9.4 AμOmega cm。

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