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首页> 外文期刊>Oxidation of Metals >A New Experimental Apparatus for In-Situ Characterization of Silica Growth During Passive Corrosion of SiC at Very High Temperatures
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A New Experimental Apparatus for In-Situ Characterization of Silica Growth During Passive Corrosion of SiC at Very High Temperatures

机译:SiC在非常高温下被动腐蚀过程中硅生长的原位表征的新实验装置

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摘要

A new experimental method based on Joule-heating and interferometry was developed in order to gather in situ quantitative information on the kinetics of silica growth during passive corrosion of SiC under CO_2-containing environments at very high temperatures. This method proved efficient in studying the thin-oxide regime and the initial linear regime as well as the parabolic regime described in the Deal-Grove rate law. Linear rate constants followed an Arrhenius law with a very high activation energy of 593 kJ mol~(-1) and were independent of gas composition, suggesting the chemical reaction at the SiC/SiO_2 interface involved a vacancy mechanism.
机译:开发了一种基于焦耳热和干涉法的新实验方法,以便在非常高的温度下在含CO 2的环境中就SiC的被动腐蚀过程中原位收集定量的二氧化硅生长动力学信息。实践证明,该方法在研究薄氧化物状态和初始线性状态以及Deal-Grove率定律中描述的抛物线状态方面非常有效。线性速率常数遵循阿伦尼乌斯定律,具有非常高的活化能593 kJ mol〜(-1),并且与气体组成无关,这表明SiC / SiO_2界面的化学反应涉及空位机理。

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