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Photoluminescence properties of Eu3+-and Tb3+-doped YAlO3 phosphors for white LED applications

机译:掺Eu3 +和Tb3 +的YAlO3荧光粉在白色LED应用中的发光特性

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摘要

Eu3+-and Tb3+-doped YAlO3 phosphors are prepared by solid-state reaction method and their photoluminescence properties are investigated as functions of the Eu3+ and Tb3+ concentrations. The phosphors crystallize in the orthorhombic crystal structure. Under near-ultraviolet excitation (398 nm), the emission spectra of Y1-xAlO3:xEu(3+)(0.02 <= x <= 0.1) phosphors show several strong peaks at 593, 616, 655, and 697 nm, which are attributed to the D-5(0) -> F-7(J) (J=1, 2, 3, and 4) transitions of Eu(3+)ions. A high value of (D-5(0)-> F-7(2))/(D-5(0)-> F-7(1)) is obtained for the Y1-xAlO3:xEu(3+)phosphors, indicative of high-purity red emission. Furthermore, the emission peaks of Y(1-)yAlO(3):yTb(3+) (0.04 <= y <= 0.2) phosphors are detected at 489, 544, 585, and 621 nm, which are due to the D-5(4)-> F-7(6), D-5(4)-> F-7(5), D-5(4)-> F-7(4), and D-5(4)-> F-7(3) transitions of the Tb(3+)ions, respectively. The emission peak (544 nm) corresponding to the D-5(4)-> F-7(5) transition is the most intense, which is advantageous for high green color purity. White light can be obtained by combining blue GaN LED chips with the red Y1-xAlO3:xEu(3+) and green Y(1-)yAlO(3):yTb(3) phosphors prepared in this study. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:通过固相反应方法制备了Eu3 +和Tb3 +掺杂的YAlO3荧光粉,并研究了其光致发光性能与Eu3 +和Tb3 +浓度的关系。磷光体以正交晶体结构结晶。在近紫外激发(398 nm)下,Y1-xAlO3:xEu(3 +)(0.02 <= x <= 0.1)荧光粉的发射光谱在593、616、655和697 nm处显示多个强峰,分别为归因于Eu(3+)离子的D-5(0)-> F-7(J)(J = 1、2、3和4)跃迁。对于Y1-xAlO3:xEu(3+),获得了高值(D-5(0)-> F-7(2))/(D-5(0)-> F-7(1))磷光体,指示高纯度红色发射。此外,由于D,在489、544、585和621 nm处检测到Y(1-)yAlO(3):yTb(3+)(0.04 <= y <= 0.2)荧光粉的发射峰。 -5(4)-> F-7(6),D-5(4)-> F-7(5),D-5(4)-> F-7(4)和D-5(4 )-> Tb(3+)离子的F-7(3)跃迁。对应于D-5(4)-> F-7(5)跃迁的发射峰(544 nm)最强烈,这有利于实现高绿色纯度。通过将蓝色GaN LED芯片与本研究中准备的红色Y1-xAlO3:xEu(3+)和绿色Y(1-)yAlO(3):yTb(3)荧光粉组合在一起,可以获得白光。 (C)2016 Elsevier Ltd和Techna Group S.r.l.版权所有。

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