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首页> 外文期刊>CERAMICS INTERNATIONAL >Study of the solubility of La3+-Dy3+ defect complexes and dielectric properties of (Ba1-xLax)(Ti1-xDyx)O-3 ceramics
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Study of the solubility of La3+-Dy3+ defect complexes and dielectric properties of (Ba1-xLax)(Ti1-xDyx)O-3 ceramics

机译:La3 + -Dy3 +缺陷配合物的溶解度和(Ba1-xLax)(Ti1-xDyx)O-3陶瓷介电性能的研究

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Based on the double-site compensation mode, the solubility of La-Ba(center dot)-Dy-Ti' defect complexes and the dielectric properties of (Ba1 - x Lax) (Ti1 - Dy-x(x))O-3 (0.03 <= x <= 0.20) ceramics (BLTD) were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, electron paramagnetic resonance (EPR), and dielectric measurements. The solid solubility of La-Ba(center dot)-Dy-Ti' defect complexes in the BaTiO3 lattice was determined to be x=0.17. With an increase in x, the increase in the unit cell volume was linear and satisfied Vegard's law. The dielectric-peak temperature (T-m) decreased rapidly at a rate of -23 degrees C/at% La-Ba(center dot)-Dy-Ti' The BLTD ceramics with x=0.05 and 0.07 met the Y5V specification with a higher room-temperature permittivity (epsilon(RT)' similar to 4000 and 3000) and a lower dielectric loss (tan delta < 0.04). A weak g=2.004 EPR signal associated with ionized Ti-vacancy defects appeared in all of the BLTD ceramics. The exclusive occupations of La3+ ions at Ba sites and the preference for the self-compensation mode by Dy3+ ions are responsible for the formation of predominant La-Ba(center dot)-Dy-Ti' defect complexes and the appearance of the minute concentration of Ti vacancies and Dy-Ba(center dot)-Dy-Ti' defect complexes. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:基于双位点补偿模式,La-Ba(中心点)-Dy-Ti'缺陷配合物的溶解度和(Ba1-x Lax)(Ti1-Dy-x(x))O-3的介电性能(0.03 <= x <= 0.20)陶瓷(BLTD)使用X射线衍射(XRD),扫描电子显微镜(SEM),拉曼光谱,电子顺磁共振(EPR)和介电测量进行了研究。 La-Ba(中心点)-Dy-Ti'缺陷络合物在BaTiO3晶格中的固溶度确定为x = 0.17。随着x的增加,晶胞体积的增加是线性的,并满足Vegard定律。介电峰温度(Tm)以-23摄氏度/ at%La-Ba(中心点)-Dy-Ti'的速率迅速降低。x = 0.05和0.07的BLTD陶瓷满足Y5V规范,具有更高的空间介电常数(ε(RT)类似于4000和3000)和较低的介电损耗(损耗角正切<0.04)。在所有BLTD陶瓷中均出现了一个弱的g = 2.004 EPR信号,该信号与电离的Ti空位缺陷有关。 La离子在Ba位点的专有占据以及Dy3 +离子对自补偿模式的偏爱导致主要的La-Ba(中心点)-Dy-Ti'缺陷复合物的形成以及微量浓度的La。 Ti空位和Dy-Ba(中心点)-Dy-Ti'缺陷配合物。 (C)2014 Elsevier Ltd和Techna Group S.r.l.版权所有。

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