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Improved pseudo-capacitive performance of manganese oxide films synthesized by the facile sol-gel method with iron acetate addition

机译:易熔溶胶-凝胶法加乙酸铁合成的锰氧化物膜的拟电容性能改善

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摘要

Manganese oxide electrodes possessing pseudo-capacitance behaviors were successfully made with a simple sol-gel method. The experimental results showed that the specific capacitance was 101.2F/g for pure manganese oxide films after annealing at 300℃. However, the specific capacitance increased to 232.3 F/g with iron acetate (1.0 mol% Fe) addition and after annealing at 350℃. The surface morphology observations revealed that the annealing temperature of 350℃ produced a higher surface area film with smaller pores. X-ray diffraction results showed that the manganese-iron oxide was composed of Mn_3O_4 and Mn_2O_3 phases, without iron oxide diffraction peaks. The manganese-iron oxide electrode with Mn_3O_4 and Mn_2O_3 phases exhibited good electrochemical performance and capacitance efficiency.
机译:采用简单的溶胶-凝胶法成功制备了具有伪电容行为的氧化锰电极。实验结果表明,纯锰氧化物膜在300℃退火后的比电容为101.2F / g。然而,添加乙酸铁(1.0 mol%Fe)并在350℃退火后,比电容增加到232.3 F / g。表面形貌观察表明,退火温度为350℃时,产生了较高的表面积,较小的孔膜。 X射线衍射结果表明,锰铁氧化物由Mn_3O_4和Mn_2O_3相组成,没有铁氧化物的衍射峰。 Mn_3O_4和Mn_2O_3相的锰铁氧化物电极表现出良好的电化学性能和电容效率。

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