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Synthesis and characterization of high performance CaZrO3-doped X8R BaTiO3-based dielectric ceramics

机译:高性能CaZrO3掺杂的X8R BaTiO3基介电陶瓷的合成与表征

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摘要

A novel system of lead-free X8R BaTiO3-based dielectric materials with high dielectric constants was prepared via conventional mixing method. The phase structure, dielectric and electrical properties and the "relaxorlike" characteristic of ceramic materials were systemically studied. The XRD results indicate that no secondary phase formed in the CaZrO3-doped samples after sintering. SEM micrographs reveal that the grain size of CaZrO3-doped BaTiO3-based samples are not uniform, ranging from 0.2 to 0.9 pm. Bulk densities and dielectric properties were measured as a function of CaZrO3 concentration. The Curie temperatures of all CaZrO3 doped samples increase due to the existence of an internal stress between grain cores and shells caused by the diffusion of CaZrO3. The oxygen vacancies have a profound effect on the dielectric loss and frequency characteristics. The 3.5 wt% CaZrO3-doped sample sintered at 1250 degrees C showed the optimal dielectric performance (epsilon(r)=4330, tan delta < 1.5%, Delta C/C-20 degrees C <= +/- 14%) that satisfied EIA-X8R specification. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:通过常规混合方法制备了一种新型的无铅X8R BaTiO3基高介电材料体系。系统地研究了陶瓷材料的相结构,介电性能和电性能以及“类弛豫”特性。 XRD结果表明,烧结后在CaZrO3掺杂的样品中没有形成第二相。 SEM显微照片显示,CaZrO3掺杂的BaTiO3基样品的晶粒尺寸不均匀,范围为0.2至0.9 pm。测量体积密度和介电性能随CaZrO3浓度的变化。由于CaZrO3的扩散导致晶粒核与壳之间存在内部应力,因此所有掺杂CaZrO3的样品的居里温度都会升高。氧空位对介电损耗和频率特性有深远的影响。在1250摄氏度下烧结的3.5 wt%的掺杂CaZrO3的样品显示出最佳的介电性能(ε= 4330,tanδ<1.5%,Delta C / C-20摄氏度<= +/- 14%)满足EIA-X8R规范。 (C)2015 Elsevier Ltd和Techna Group S.r.l.版权所有。

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