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Ta-doped In203 transparent conductive films with high transmittance and low resistance

机译:高透射率,低电阻的掺Ta In203透明导电膜

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摘要

Ta-doped In203 transparent conductiv oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The minimum resistivity of 2.8 x 10-4 52 cm is obtained from the film deposited at the sputtering power of 170 W. The average optical transmittance of the films is over 90%.
机译:在室温下,通过射频(RF)溅射将掺Ta的In203透明导电氧化物(TCO)薄膜沉积在玻璃基板上。通过X射线衍射(XRD),场发射扫描电子显微镜(FE-SEM),霍尔测量和光学透射光谱研究了溅射功率对薄膜结构,形态,电学和光学性质的影响。所获得的膜是具有立方结构的多晶并且优选在(222)晶体学方向上取向。从以170 W的溅射功率沉积的薄膜获得的最小电阻率为2.8 x 10-4 52 cm。薄膜的平均光学透射率超过90%。

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