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Nb_2O_5 doping effect on electrical properties of ZnO-V_2O_5-Mn_3O_4 varistor ceramics

机译:Nb_2O_5掺杂对ZnO-V_2O_5-Mn_3O_4压敏陶瓷电性能的影响

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摘要

The microstructure and electrical properties of ternary ZnO-V_2O_5-Mn_3O_4 varistor ceramics modified with Nb_2O_5 were systematically investigated for different amounts of Nb_2O_5. The average grain size for Nb_2O_5-doped ceramics was larger than Nb_2O_5-free ceramics and it was in the range of 6.64-7.27 ìm. The sintered density of pellets increased from 5.50 to 5.54 g/cm~3 as the Nb_2O_5 amount increased. The breakdown field increased from 947 to 4521 V/cm with an increase in the amount of Nb_2O_5, whereas a further addition caused it to decrease up to 4374 V/cm at 0.25 mol%. The varistor ceramics doped with 0.05 mol% Nb_2O_5 exhibited the best nonlinear properties, in which the nonlinear coefficient is 47 and the leakage current density is 0.14 mA/cm~(-2).
机译:针对Nb_2O_5的不同添加量,系统研究了Nb_2O_5改性的三元ZnO-V_2O_5-Mn_3O_4压敏电阻陶瓷的微观结构和电学性能。掺Nb_2O_5的陶瓷的平均晶粒尺寸大于不含Nb_2O_5的陶瓷,平均晶粒尺寸在6.64-7.27μm范围内。随着Nb_2O_5含量的增加,球团的烧结密度从5.50增加到5.54 g / cm〜3。随着Nb_2O_5的增加,击穿场从947增加到4521 V / cm,而进一步的添加使击穿场在0.25 mol%时降低至4374 V / cm。掺杂0.05 mol%Nb_2O_5的压敏陶瓷表现出最好的非线性性能,其非线性系数为47,漏电流密度为0.14 mA / cm〜(-2)。

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