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Varistors based on Ta-doped TIO_2

机译:基于Ta掺杂TIO_2的压敏电阻

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摘要

The nonlinear current (I)-voltage (V) characteristics of titanium dioxide are examined when doped with small quantities (0.0,5-0.5 at. percent) of tantalum pentaoxide. For optimum compositions, the nonlinear coefficients are found to be in the range of 25-30 and the breakdown field strength (E_B) is ~4000 V/cm. The obtained a- and E_B-values are higher than the previously reported values for TiO_2 ceramics. The acceptor like surface states at the grain boundary adsorb oxygen during sintering and cooling, leading to formation of grain boundary barrier. The grain boundary barrier height (
机译:当掺杂少量(0.0,5-0.5 at。%)的五氧化钽时,将检查二氧化钛的非线性电流(I)-电压(V)特性。对于最佳成分,发现非线性系数在25-30范围内,击穿场强(E_B)为〜4000 V / cm。获得的a和E_B值高于先前报道的TiO_2陶瓷值。在烧结和冷却期间,晶界处的受体状表面状态吸收氧,导致形成晶界势垒。使用肖特基方程计算晶界势垒高度(

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