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Preparation of porous SiC ceramics for thermal dissipation purposes

机译:制备用于散热目的的多孔SiC陶瓷

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In the present study, porous silicon carbide (SiC) was prepared by mixing coarse SiC particles with a small amount of sodium silicate. The firing was then carried out at 1000 degrees C in air for 10 min. Though the resulting porosity is as high as 40%, the thermal conductivity of the porous SiC reached 19 W/m K, with the flexural strength reaching 20 MPa. The sodium silicate formed a strong bond between SiC particles; the thermal resistance of the thin bonding layer was low. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:在本研究中,通过将粗大的SiC颗粒与少量的硅酸钠混合来制备多孔碳化硅(SiC)。然后在空气中于1000℃下烧制10分钟。尽管产生的孔隙率高达40%,但多孔SiC的导热系数达到19 W / m K,抗弯强度达到20 MPa。硅酸钠在SiC颗粒之间形成牢固的键;薄粘合层的热阻低。 (C)2014 Elsevier Ltd和Techna Group S.r.l.版权所有。

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