Simulation of near-field images of a semiconductor surface with different carrier distributions

摘要

A method for determining the near-field image of a semiconductor surface with inhomogenous distribution of carriers has been proposed. This method is based on the linear response theory. As a result, the solution to the self-consistent Lippmann-Schwinger equation is expressed in terms of the effective susceptibility. A calculation is carried out for a semiconductor surface with inhomogenous distribution of electrons under the surface. It is shown that polarizations of both the probe field and the field at the detector in the far zone significantly affect the near-field distribution. The results obtained suggest that the orientation of aggregates (defects) under the semiconductor surface can be determined. The approach developed is universal and can be used for simulation in the scanning near-field microscopy for different types of objects under the surface.