Different types of quantum beats were experimentally observed in the photoluminescence kinetics of semiconductor nanostructures with InP quantum dots characterized by strong inhomogeneous broadening of the optical transitions. Specific types of beats were selected by varying the magnitude and orientation of the magnetic field, the applied bias voltage, and the frequencies of the exciting and detected light. Parameters of the fine structure of electrons and holes in the system under study and characteristic relaxation times of the spin coherence are determined from the experimental data.
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