Quantitative effect of minority carrier diffusion length on the electrical property of cast monocrystalline silicon solar cell

摘要

The paper reports on the quantitative study of the relationship between minority carrier diffusion length (L-D) and electrical property of cast monocrystalline silicon (Si) solar cell. The cast monocrystalline Si cells were fabricated using a conventional Al back surface field (BSF) cell structure. L-D, internal quantum efficiency and morphology of cells were characterize utilizing WT-2000PVN, QEX7 and SEM. The fitted expression of conversion efficiency as a natural logarithmic function of L-D was extracted. The open circuit voltage (V-oc) and short circuit current (I-sc) can be both given as natural logarithmic functions of L-D, while the series resistance and shunt resistance are almost independent of L-D. The material quality of cast monocrystalline Si mainly impacts on I-sc and V-oc. (C) 2015 Elsevier GmbH. All rights reserved.