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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Large Goos-Hanchen shift for different modes in metal-insulator-metal waveguide with electro-optic material
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Large Goos-Hanchen shift for different modes in metal-insulator-metal waveguide with electro-optic material

机译:具有电光材料的金属-绝缘体-金属波导中不同模式的大Goos-Hanchen位移

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摘要

We study the large Goos-Hanchen (GH) shift for different guided mode in the metal insulator metal waveguide by the adjusting of electro-optic (EO) material permittivity. Stationary-phase method is used to calculate the GH shifts for different guided mode propagating in the waveguide, and simulation results show that the increase of the upper-cladding metal layer reduces the GH shift and the critical incident angle. In addition, the GH shift of higher-order mode has less sensitivity to the change of thickness of upper-cladding metal layer but better sensitivity to the incident angle than lower-order mode. These different properties of GH shift for different modes can be used to design detectors with different functions. (C) 2015 Elsevier GmbH. All rights reserved.
机译:我们通过调节电光(EO)材料的介电常数研究了金属绝缘子金属波导中不同导模的大Goos-Hanchen(GH)位移。静止相位法用于计算波导中不同导模传播的GH位移,仿真结果表明,增加上包层金属层可以减小GH位移和临界入射角。另外,与低阶模式相比,高阶模式的GH位移对上覆金属层的厚度变化的敏感性较小,但对入射角的敏感性较高。 GH位移针对不同模式的这些不同特性可用于设计具有不同功能的检测器。 (C)2015 Elsevier GmbH。版权所有。

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