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首页> 外文期刊>Optics Letters >Enhancement of CsLiB_(6)O_(10) surface-damage resistance by improved crystallinity and ion-beam etching
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Enhancement of CsLiB_(6)O_(10) surface-damage resistance by improved crystallinity and ion-beam etching

机译:通过改善结晶度和离子束刻蚀增强CsLiB_(6)O_(10)的表面损伤抵抗力

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摘要

The surface laser-induced damage threshold (LIDT) of CsLiB_(6)O_(10) (CLBO) crystal was enhanced twofold with improved crystallinity and ion-beam etching. For crystals with high crystal quality (bulk LIDT, 15.0-19.0 GW/cm~(2)), the surface LIDT was 1.4-fold higher than for those with conventional crystal quality (bulk LIDT, 9.0-12.0 GW/cm~(2)). In addition, removal of residual surface-polishing compounds by means of ion-beam etching can further enhance the surface LIDT by another 1.5-fold. Thus, CLBO crystals with high crystal quality and ion-beam etching are now more reliable for high-power UV light generation.
机译:CsLiB_(6)O_(10)(CLBO)晶体的表面激光诱导损伤阈值(LIDT)通过提高结晶度和离子束刻蚀而提高了两倍。对于具有高晶体质量的晶体(体LIDT,15.0-19.0 GW / cm〜(2)),其表面LIDT比具有传统晶体质量的晶体(体LIDT,9.0-12.0 GW / cm〜(2))高1.4倍。 ))。另外,通过离子束蚀刻去除残留的表面抛光化合物可以使表面LIDT进一步提高1.5倍。因此,具有高晶体质量和离子束刻蚀的CLBO晶体现在对于产生大功率的紫外线更为可靠。

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