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首页> 外文期刊>Optics & Laser Technology >Transverse laser induced thermoelectric voltage effect in tilted La _(0.5)Sr_(0.5)CoO_3 thin films
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Transverse laser induced thermoelectric voltage effect in tilted La _(0.5)Sr_(0.5)CoO_3 thin films

机译:倾斜La _(0.5)Sr_(0.5)CoO_3薄膜中的横向激光诱导热电电压效应

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摘要

The transverse laser induced thermoelectric voltage effect has been investigated in tilted La_(0.5)Sr_(0.5)CoO_3 thin films grown on vicinal cut LaAlO_3 (1 0 0) substrates when films are irradiated by pulse laser at room temperature. The detected voltage signals are demonstrated to originate from the transverse Seebeck effect as the linear dependence of voltage on tilted angle in the range of small tilted angle. The Seebeck coefficient anisotropy ΔS of 0.03 μV/K at room temperature is calculated and its distorted cubic structure is thought to be responsible for this. Films grown on a series of substrates with different tilted angles show the optimum angle of 19.8° for the maximum voltage. Film thickness dependence of voltage has also been studied.
机译:研究了在室温下用脉冲激光辐照在邻近切割的LaAlO_3(1 0 0)衬底上生长的倾斜La_(0.5)Sr_(0.5)CoO_3薄膜中,横向激光诱导的热电压效应。证明检测到的电压信号源于横向塞贝克效应,因为电压在小倾角范围内对倾角呈线性关系。计算出室温下塞贝克系数各向异性ΔS为0.03μV/ K,并认为其畸变的立方结构是造成这种现象的原因。在一系列具有不同倾斜角度的基板上生长的薄膜对于最大电压显示出19.8°的最佳角度。还研究了电压的膜厚度依赖性。

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