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首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >Second- and third-harmonic generation as a local probe for nanocrystal-doped polymer materials with a suppressed optical breakdown threshold
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Second- and third-harmonic generation as a local probe for nanocrystal-doped polymer materials with a suppressed optical breakdown threshold

机译:二次谐波和三次谐波产生,作为掺入纳米晶的聚合物材料的局部探针,具有抑制的光击穿阈值

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Second- and third-harmonic generation processes are shown to allow the detection of absorptive agglomerates of nanocrystals in transparent materials and the visualization of optical breakdown in nanocomposite materials. Correlations between laser-induced breakdown and the behavior of the second- and third-harmonic signals produced in SiC/PMMA nanocomposite films are studied. The potential of second- and third-harmonic generation for the on-line visualization of laser breakdown in nanocomposite polymer materials is revealed, with the ablative material removal being monitored by the decay of the second- and third-harmonic signals. The second and third harmonics generated around the optical breakdown threshold by 75-fs pulses of 1.25-μm Cr:forsterite laser radiation are respectively more than two and four orders of magnitude more intense than the second and third harmonics produced under identical conditions by 40-ps pulses of a Nd:YAG laser. The breakdown threshold for PMMA films doped with 10-20-nm SiC nanocrystals forming absorptive agglomerates are demonstrated to be more than an order of magnitude lower than the breakdown threshold for crystalline SiC and about an order of magnitude lower than that for nondoped PMMA films.
机译:示出了第二和第三谐波产生过程,其允许检测透明材料中的纳米晶体的吸收性附聚物并且使纳米复合材料中的光学击穿可视化。研究了激光诱导击穿与SiC / PMMA纳米复合薄膜中产生的二次谐波和三次谐波信号的行为之间的相关性。揭示了在纳米复合聚合物材料中在线观察激光击穿的二次谐波和三次谐波的潜力,通过二次谐波和三次谐波信号的衰减来监测烧蚀材料的去除。由1.25-μmCr:镁橄榄石激光辐射的75 fs脉冲在光击穿阈值附近产生的二次谐波和三次谐波分别比在相同条件下产生的二次谐波和三次谐波强度高出两倍和四个数量级以上。 Nd:YAG激光的ps脉冲。已证明,掺杂有10-20 nm SiC纳米晶体形成吸收性团聚体的PMMA膜的击穿阈值比晶体SiC的击穿阈值低一个数量级以上,并且比非掺杂的PMMA膜的击穿阈值低一个数量级。

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