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Grating structures with phase mask period in silica-on-silicon planar waveguides

机译:硅对硅平面波导中具有相位掩膜周期的光栅结构

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摘要

The resultant properties of a damage grating generated under phase mask processing conditions were investigated on a germanosilicate planar waveguide bilayer fabricated by plasma enhanced chemical vapor deposition. Direct writing in the waveguide silica-on-silicon material with a phase mask designed to produce 1550 nm Bragg gratings resulted in a damage grating with a period around 1 µm phase mask period. This does not agree with the expected period of around 0.5 µm for a first order diffraction grating satisfying the Bragg condition when the phase mask zero order is less than a few percent of the input beam.
机译:在等离子增强化学气相沉积法制备的锗硅酸盐平面波导双层膜上研究了在相位掩模处理条件下产生的损伤光栅的合成特性。使用设计为产生1550 nm布拉格光栅的相位掩模直接写入波导硅上二氧化硅材料会导致损坏光栅,其相位掩模周期约为1 µm。当相位掩模零阶小于输入光束的百分之几时,这与满足布拉格条件的一阶衍射光栅的预期周期约0.5 µm不同。

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