Passively Q-switched diode-pumped Cr~(4+):YAG/Nd~(3+):GdVO_(4) monolithic microchip laser

摘要

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO_(4) crystal and a Cr~(4+):YAG saturable absorber. The monolithic design consists of 1 mm long 1percent doped Nd:GdVO_(4) optically contacted on a 0.4 mm long Cr~(4+):YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.