Local Modification of Thin Oxide Films on a Titanium Surface

摘要

It is shown that a controllable structural rearrangement of a thin titanium oxide film, accompa-nied by a change in the bandgap width, can be accomplished under the probe tip of a scanning tunneling microscope (STM). The mechanism of the rearrangement is considered to be the migration of cations and oxygen vacancies in the electric field of the STM.