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The effect of perpendicular electric field on temperature-induced plasmon excitations for intrinsic silicene

机译:垂直电场对本征硅温度诱导的等离激元激发的影响

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摘要

We use the tight-binding model and the random-phase approximation to investigate the intrinsic plasmon in silicene. At finite temperatures, an undamped plasmon is generated from the interplay between the intraband and the interband-gap transitions. The extent of the plasmon existence range in terms of momentum and temperature, which is dependent on the size of the single-particle-excitation gap, is further tuned by applying a perpendicular electric field. The plasmon becomes damped in the interband-excitation region. A low damped zone is created by the field-induced spin split. The field-dependent plasmon spectrum shows a strong tunability in the plasmon intensity and spectral bandwidth. This could make silicene a very suitable candidate for plasmonic applications.
机译:我们使用紧密结合模型和随机相近似研究硅中的固有等离子体激元。在有限的温度下,带内和带间间隙跃迁之间的相互作用会产生无阻尼等离子体激元。通过施加垂直电场进一步调整了取决于动量和温度的等离激元存在范围的程度,该范围取决于单粒子激发间隙的大小。等离子激元在带间激励区域被阻尼。磁场感应的自旋分裂会形成一个低阻尼区。与场有关的等离激元光谱在等离激元强度和光谱带宽方面显示出很强的可调性。这可能使硅树脂成为等离子体应用的非常合适的候选材料。

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