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Photoelectrochemically deposited Sb2Se3 thin films: deposition mechanism and characterization

机译:光电化学沉积Sb2Se3薄膜:沉积机理与表征

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摘要

Sb2Se3 thin films were photoelectrochemically deposited (PED) and displayed a compelling photoelectrochemical (PEC) performance. The main influence of the illumination mechanism on Sb2Se3 deposition is that the photoconductive effect accelerates the deposition rate and the photogenerated electrons (in the conduction band of the deposited Sb2Se3 thin film) promote the electroreduction of SbO+. Electrochemical impedance spectroscopy (EIS) and potentiostatic polarization show evidence that illumination can promote the rate of cathodic reduction. Linear sweep photovoltammetry (LSPV) and X-ray fluorescence spectrometry (XRF) indicate that illumination facilitates the reduction of SbO+. The PEDprocess can improve the homogeneity and compactness of the films, facilitate the growth of stoichiometric Sb2Se3 and further enhance the photocurrent response of films, compared to the conventional electrochemical deposition (CED) process.
机译:Sb2Se3薄膜经过光电化学沉积(PED),表现出令人信服的光电化学(PEC)性能。照明机制对Sb2Se3沉积的主要影响是光电导效应加快了沉积速率,光生电子(在沉积的Sb2Se3薄膜的导带中)促进了SbO +的电还原。电化学阻抗谱(EIS)和恒电位极化表明,照明可以促进阴极还原速率。线性扫描伏安法(LSPV)和X射线荧光光谱法(XRF)表明,照明有助于减少SbO +。与传统的电化学沉积(CED)工艺相比,PED工艺可以提高薄膜的均匀性和致密性,促进化学计量Sb2Se3的生长,并进一步提高薄膜的光电流响应。

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