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Optical excitation processes in the near band-edge region of KAlSi3O8 and NaAlSi3O8 feldspar

机译:KAlSi3O8和NaAlSi3O8长石近带边缘区的光激发过程

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摘要

A complex variety of excitation and relaxation pathways are available for charge in naturally occurring NaAlSi3O8 and KAlpSi(3)O(8) feldspar crystals, when excited with photons in the trans-band-edge energy range 4-12 eV These can involve a mixture of electronic transitions associated with defect states, the conduction and valence bands and their associated band-tails. In order to demonstrate that a relationship exists between these processes, combinations of three spectroscopic techniques are deployed in this work: luminescence excitation/emission mapping, energy-resolved photo-stimulated phosphorescence and energy-dependent photo-transferred optically stimulated luminescence. The photo-transferred OSL confirms the bandgap energy of alkali feldspars to be 7.7eV at 10K, and highlights the role played by a dominant optically active defect 4.4 eV below the conduction band, associated with blue emission in the materials. Luminescence and phosphorescence excitation spectra provide additional, complementary, information regarding the excited states of the blue-emitting defects, including their transition lifetimes and decay paths. Red emission associated with Fe3+ luminescence is mostly isolated from the blue emission/excitation processes. A new set of transitions are identified, not previously observed experimentally, that are attributed (T-d symmetry approximation) to the ground-to-excited (6)A(1)(S-6)-> F-4((4)A(2), T-4(1), T-4(2)) Fe3+ transitions, with (6)A(1) (S-6)-> F-4((4)A(2)) yielding a characteristically narrow feature at 4.61 eV: significantly, excitation to this level allows photo-transferred OSL to take place, a process that is not obviously identifiable with the other transitions of the set. The conclusion of the work is that synchrotron-based luminescence methods can potentially provide one of the few routes to firmly establishing the full optical characteristics of naturally occurring wide bandgap luminescence systems, essential for exploiting their radiation dosimetry properties. (c) 2006 Elsevier Ltd. All rights reserved.
机译:当在跨频带边缘能量范围为4-12 eV的光子中激发时,天然存在的NaAlSi3O8和KAlpSi(3)O(8)长石晶体中可以使用多种激发和弛豫途径进行充电。与缺陷状态,导带和价带及其相关的带尾相关的电子跃迁。为了证明这些过程之间存在关系,在这项工作中采用了三种光谱技术的组合:发光激发/发射图谱,能量分辨的光激发磷光和能量依赖的光转移光激发的发光。光传输的OSL证实了碱长石在10K时的带隙能为7.7eV,并突出了在导带以下4.4 eV的主要光学活性缺陷所起的作用,与材料中的蓝色发射有关。发光和磷光激发光谱提供了有关蓝光缺陷激发态的其他补充信息,包括其过渡寿命和衰减路径。与Fe3 +发光相关的红色发射大部分与蓝色发射/激发过程隔离。识别出一组新的过渡,以前从未在实验中观察到,这些过渡归因于(Td对称近似)归因于地面激发的(6)A(1)(S-6)-> F-4((4)A (2),T-4(1),T-4(2))Fe3 +跃迁,(6)A(1)(S-6)-> F-4((4)A(2))产生a在4.61 eV处具有典型的窄特征:显着地,激发到该水平允许进行光转移的OSL,这一过程在该集合的其他转换中显然无法识别。这项工作的结论是,基于同步加速器的发光方法可以潜在地提供几条途径,以牢固地建立自然存在的宽带隙发光系统的完整光学特性,这对于开发其辐射剂量学特性至关重要。 (c)2006 Elsevier Ltd.保留所有权利。

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