Investigation of direct production of ~(68)Ga with low energy multiparticle accelerator

摘要

Experimentally measured cross sections are presented for the ~(nat)Cu(α, xn)~(~(66),~(67),~(68))Ga and ~(~(68))Zn(p, xn)~(~(67),68)Ga nuclear processes up to 36 and 20 MeV, respectively. Based on these results and the reliable cross section data available in the literature, the possible thick target yields were also calculated. Two different ~(68)Ga production routes (Cu+α and Zn+ p) are discussed in detail, especially with regard to the ~(66)Ga and ~(67)Ga contamination levels as a function of the target enrichment level and the incident bombarding energies. Both processes can be used for in-house ~(68)Ga production with low (<1%) ~(66)Ga and/or ~(67)Ga EOB contamination using enriched ~(68)Zn (>80%) or ~(65)Cu (>95%) target. The maximum available yield on 100% enriched ~(68)Zn and ~(65)Cu (irradiation time: 2.25 h; bombarding energy: E_p = 20 MeV and E_α = 18 MeV) is 352.45 mCi/μA (13.04 GBq/μA) and 14.28 mCi/μA (528.36 MBq/μA), respectively.