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Synthesis, characterization, and 2,4-dichlorophenoxyacetic acid degradation on In-Na_2Ti_6O_(13) sol–gel prepared photocatalysts

机译:In-Na_2Ti_6O_(13)溶胶-凝胶制备的光催化剂的合成,表征和2,4-二氯苯氧基乙酸的降解

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Indium-Na_2Ti_6O_(13) doped semiconductors were prepared by the sol–gel method using titanium and sodium alkoxides as precursors. The gelled samples were annealed at 700 C for 4, 6, and 8 h, and then characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), and UV–Vis diffused reflectance spectroscopy (DRS). XRD patterns of the samples show the formation of the Na_2Ti_6O_(13) phase, whose crystallinity depends on the annealing time. The band gap calculated from the UV–Vis Kubelka–Munk function report similar values (3.2–3.4 eV) for all of the samples annealed at different times. SEM observations of the semiconductors showed microfiber bundle morphologies of about 5 lm. Meanwhile, by EDS analysis, indium oxide highly homogeneously dispersed on the hexatitanate surface was identified. The evaluation of the In-Na_2Ti_6O_(13) semiconductors in the 2,4-dichlorophenoxyacetic acid (2,4-D) photodecomposition using ultraviolet light (λ = 254 nm) irradiation show that the photoactivity of the solids depends on the annealing time applied to the samples. The role of indium oxide is related to the indium oxide dispersed on the surface of the titanate diminishing the electron-hole recombination rate.
机译:铟-Na_2Ti_6O_(13)掺杂的半导体是通过溶胶-凝胶法,以钛和钠的醇盐为前体制备的。胶凝后的样品在700℃退火4、6和8 h,然后通过X射线衍射(XRD),扫描电子显微镜(SEM),能量色散光谱(EDS)和UV-Vis漫反射特性进行表征光谱(DRS)。样品的XRD图谱显示形成了Na_2Ti_6O_(13)相,其结晶度取决于退火时间。从UV–Vis Kubelka–Munk函数计算出的带隙报告了在不同时间退火的所有样品的相似值(3.2–3.4 eV)。半导体的SEM观察表明,微纤维束的形态约为5 lm。同时,通过EDS分析,鉴定出高度均匀地分散在六钛酸盐表面上的氧化铟。使用紫外光(λ= 254 nm)进行的2,4-二氯苯氧基乙酸(2,4-D)光分解对In-Na_2Ti_6O_(13)半导体的评估表明,固体的光活性取决于所施加的退火时间到样品。氧化铟的作用与分散在钛酸酯表面上的氧化铟降低电子空穴复合率有关。

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