Photobleaching of Ga{sub}2S{sub}3-GeS{sub}2 films prepared with pulsed laser deposition

摘要

Influence of the illumination with energy above band gap on optical properties of the thin (x)(Ga{sub}2S{sub}3)(1-x)(GeS{sub}2) films prepared with Pulsed Laser Deposition was investigated. Observed photo-induced bleaching is due to photo-oxidation of Ge and possible Ga atoms. Increasing of Ga content in the film results in increasing of the bleaching effect. This process is limited by the rate of diffusion of oxygen.