Room-temperature laser on a ZnS:Fe2+ polycrystal with a pulse radiation energy of 0.6 J

摘要

A laser on polycrystalline ZnS:Fe2+ samples pumped at room temperature by a pulsed electrodischarge HF laser was investigated. Samples of zinc sulphide grown by the method of chemical vapour deposition (CVD) were doped with iron ions from two sides by the diffusion method. The doping of the crystals was performed using the process of hot isostatic pressing (HIP treatment) at an argon pressure of 100 MPa and a temperature of 1265 degrees C. A longer duration of HIP treatment resulted in a greater depth of sample doping and higher slope efficiency of the laser. For a crystal subjected to HIP treatment for 151 h, a generation energy 660 mJ was obtained. The values of the slope and total efficiency of the energy absorbed in an active element were, respectively, eta(slope) = 36% and eta(abs) approximate to 26%. Based on the results obtained, and data from earlier published works, a conclusion has been made that to enhance the generation characteristics of a ZnS:Fe2+ laser it is necessary to increase the temperature of the HIP treatment of CVD ZnS.