Highly efficient Nd:LuVO_4 laser by direct in-band diode pumping at 915 nm

摘要

A Nd:LuVO_4 crystal was pumped directly into the emitting level by a laser diode at 915 nm for the first time to our knowledge. We achieved an output power of 6.7 W at 1066 nm for an absorbed pump power of 8.4 W, corresponding to an optical-to-optical conversion efficiency of 79.8%. A decrease of about 20% in heat generation under 915 nm pumping was observed compared with the 880 nm pumping.