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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Hot microcontact printing for patterning ITO surfaces. Methodology, morphology, microstructure, and OLED charge injection barrier imaging
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Hot microcontact printing for patterning ITO surfaces. Methodology, morphology, microstructure, and OLED charge injection barrier imaging

机译:用于图案化ITO表面的热微接触印刷。方法学,形态,微观结构和OLED电荷注入势垒成像

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A soft lithographic microcontact printing (muCP) procedure is successfully applied for the first time to form densely packed organosilane self-assembled monolayers (SAMs) on the surface of ITO (Sn-doped In2O3) coated glass via a thermally activated deposition process. Hot microcontact printing (HmuCP) enables localized transfer with 1.0-40 mum feature sizes of dense docosyltrichlorosilane (CH3(CH2)(20)CH2SiCl3 = DTS) monolayer patterns onto ITO, which reacts sluggishly under conventional muCP conditions. X-ray reflectivity measurements yield a thickness of 12.1 +/- 0.1 Angstrom and a surface roughness of 2.8 +/- 0.1 Angstrom for HmuCP printed DTS films, which is well within the range for self-assembled monolayer formation, while the weak reflected intensity from conventionally prepared DTS films indicates a poorly organized monolayer structure. Noncontact mode AFM studies reveal that HmuCP creates uniform SAMs over a wide area with excellent line edge resolution, while the original patterns are poorly transferred by conventional muCP, presumably due to the slow Si-O bond formation. Cyclic voltammetry of 1,1'-ferrocenedimethanol solutions using HmuCP-derived, DTS SAM coated ITO working electrodes evidences good barrier properties, consistent with dense films. The DTS SAM patterns can be imaged by fabricating organic light-emitting diode (OLED) heterostructures on the patterned ITO. The DTS SAM role as a hole injection blocking layer enables patterned luminescence from the hot contact printed ITO surfaces. [References: 70]
机译:首次成功应用软光刻微接触印刷(muCP)程序,以通过热活化沉积工艺在ITO(掺Sn的In2O3)涂层的玻璃表面上形成致密堆积的有机硅烷自组装单层(SAMs)。热微接触印刷(HmuCP)可以将特征尺寸为1.0-40微米的致密十二烷基三氯硅烷(CH3(CH2)(20)CH2SiCl3 = DTS)单层图案进行局部转移到ITO,ITO在常规muCP条件下反应缓慢。对于HmuCP印刷DTS膜,X射线反射率测量得出的厚度为12.1 +/- 0.1埃,表面粗糙度为2.8 +/- 0.1埃,这正好在自组装单层形成的范围内,而反射强度较弱由常规制备的DTS膜得到的膜表明单层结构不良。非接触模式AFM研究表明,HmuCP可在宽范围内以优异的线边缘分辨率创建均匀的SAM,而传统的muCP可能无法转移原始图案,这可能是由于Si-O键形成缓慢所致。使用源自HmuCP的DTS SAM涂层的ITO工作电极对1,1'-二茂铁二甲醇溶液进行循环伏安法证明具有良好的阻隔性能,与致密膜一致。 DTS SAM图案可以通过在图案化的ITO上制造有机发光二极管(OLED)异质结构来成像。 DTS SAM充当空穴注入阻挡层,可从热接触印刷的ITO表面进行图案化的发光。 [参考:70]

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