Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases

摘要

In this paper, a theoretical study of N-polar GaN/AlxGa1-xN/GaN heterostructures is conducted systematically. The dependence of two-dimensional hole gas (2DHG, at the bottom AlxGa1-xN/GaN interface) and electron gas (2DEG, at the upper GaN/AlxGa1-xN interface) sheet densities on variables, such as GaN top layer thickness, AlxGa1-xN back barrier thickness, and Al content, is investigated. The effect of n-type doping in AlxGa1-xN and delta-doping concentrations in the GaN buffer on 2DHG and 2DEG sheet densities is also presented. For the unintentionally doped structure, the 2DHG-induced electric field E-2DHG provides the only driving force in the 2DEG formation. Thus, in order to get high dense of 2DEG in such heterostructure, 2DEG and 2DHG shall coexist through proper AlxGa1-xN back barrier design. While for intentionally doped structure (with the n-type doped AlxGa1-xN back barrier layer or delta-doped GaN buffer layer), ionized donor-induced electric field E-donor is another driving force for 2DEG. The obtained insight offers indications for the structure design of the N-polar GaN/AlxGa1-xN/GaN high electron mobility transistors. Published by AIP Publishing.