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机译:
Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan, .;
rovidence.org;
Franz-keldysh oscillations; Electromodulation; Layers; Excess;
机译:Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy
机译:Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature
机译:Deep level effects on the characteristics of Al{sub}0.24Ga{sub}0.76As/In{sub}0.20Ga{sub}0.80As/GaAs and In{sub}0.48Ga{sub}0.52P/In{sub}0.20Ga{sub}0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy
机译:Fermi-Level在GaAs(111)上的inpinning(111)用直接Ald Al
机译:mn注入和室温下的室温铁磁性行为 通过molecular Beam Epitaxy沉积的后退火Inas层
机译:LpE(液相外延)-Grown Gaas和Inp中的meV注入研究