The variation of microstructure in Czochralski silicon induced by low-high two step anneal

摘要

Systematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model involving the recombination of vacancies with interstitials is proposed to explain this phenomenon. (C) 1998 American Institute of Physics. References: 15