Annealing characteristics of highly P+hyphen;ionhyphen;implanted silicon crystalmdash;twohyphen;step anneal

摘要

Singlehyphen;step and doublehyphen;step annealing behavior of highly P+hyphen;ionhyphen;implanted layers was investigated by means of fourhyphen;point probe measurements, xhyphen;ray doublehyphen;crystal spectrometry, and electron diffraction patterns. The xhyphen;ray doublehyphen;crystal spectrometry data indicated that, in the case of singlehyphen;step annealing, the layer implanted with doses lower than 3times;1015/cm2ions was recovered with the increase of annealing temperature, while the sample implanted with doses of 1times;1016/cm2ions showed the opposite behavior. That is, the latter sample showed a very bad recrystallized layer with polycrystalline regions when it was annealed at temperatures higher than 1000thinsp;deg;C. However, in the case of doublehyphen;step annealing, the higherhyphen;temperature annealing process, conducted after long 560thinsp;deg;C annealing, made it possible to obtain a good recrystallized layer, compared with the singlehyphen;step annealing case. These results were confirmed by electron diffraction patterns.