机译:Al2O3/AlGaN/GaN HEMTs2DEG密度阻隔层界面与氧阱之间的电荷重量理论研究
IFSTTAR, SATIE Lab, 25 Allee Marronniers, F-78000 Versailles, France;
LETI CEA Tech, DCOS Dept, F-38054 Grenoble, France;
AlGaN/GaN MOS-HEMTs; Semi-analytical modeling; Oxygen traps in barrier layer;
机译:A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices
机译:Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation
机译:GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation
机译:Al2O3层和蚀刻深度对栅极凹陷Al2O3 / AlGaN / AlGaN / GaN MOS-HEMT中2deg薄片密度的影响机理
机译:具有超高室温2DEG迁移率的alGaN / GaN-on-si HEmT结构的晶圆级mOCVD生长