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机译:
Hewlett-Packard Company, 1000 NE Circle Boulevard, Corvallis, Oregon 97330-4239;
机译:Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel
机译:High mobility p-channel tin monoxide thin-film transistors with hysteresis-free like behavior
机译:High Field-Effect Mobility Two-Channel InGaZnO Thin-Film Transistors for Low-Voltage Operation
机译:Solution-Processed High-Mobility Flexible Organic Thin-Film Transistors
机译:硅MOSFET和Golden Transistor的高频缩放仿真。
机译:Channel鱼卵巢细胞和Channel鱼病毒DNA生产条件的优化
机译:Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor
机译:Channel master / JFD Electronics(Channel master)的健康评估,拟议的国家优先事项列表网站,牛津,北卡罗来纳州格兰维尔县,地区4. CERCLIs No. NCD122263825