Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

摘要

Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at approximate to 6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and approximate to 6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively. (c) 2007 American Institute of Physics.